Description 

? Negative Resist NR71-1000P is a negative tone photoresist designed for 365 nm 

wavelength exposure, using tools such as wafer steppers, scanning projection aligners, 

proximity printers contact printers. 

? These are the advantages of NR71-1000P over other resists: - superior resolution capability of less than 0.5 μm - fast develop time - fast photospeed - superior temperature resistance of up to 180°C - superior ivity in RIE process -     elimination of a need for application of adhesion promoters such as HMDS - shelf life exceeding 3 years at room temperature storage. 

? The formulation processing of NR71-1000P were designed with regard to occupational 

environmental safety. The principal solvent in NR71-1000P is gamma butyrolactone

  development of NR71-1000P is accomplished in a basic water solution. 

 

                              

Properties 

?    Solids content (%)                                                      19-23                   

?    Principal solvent                                                                                              gamma butyrolactone 

    ?    Appearance                                                             light yellow 

  liquid 

  ?    Coating characteristic                                                           very uniform,  

  striation free 

   ?    Film thickness after 150°C hotplate bake for 60 s (nm)

           Coating spin speed, 40 s spin (rpm):                                          

       800                                           1900-2100      

   2000 1170-1290 

   3000 950-1050 

   4000 817-903 

   5000 712-788 

 

    ?    Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film)     21 

? Guaranteed shelf life at 25°C storage (years)                                      3 

Processing 

 

1. Application of resist by spin coating at ed spin speed for 40 s. 

 

2. 150°C hotplate bake for 60 s;  165°C hotplate bake for 240 s (softbake) 

 

3. Resist exposure with a tool emitting 365 nm wavelength. 

 

4. 100°C hotplate bake for 60 s; 110°C hotplate bake for 240 s (post-exposure bake)

 

5. Resist development in Resist Developer RD6 by spray or immersion. 

Development time for 1 μm thick film, for example, is 10 s. 

To increase development time to 50 s combine RD6/water 3:1. 

 

6. Resist rinse in deionized water until water resistivity reaches prescribed limit. 

 

7. Drying of resist. 

 

8. Removal of resist in Resist Remover RR41. 

 

For good conductors of heat such as Si, GaAs, InP, etc.

 For 1 mm thick glass substrate. 

 

 

 

Hling Precautions 

 

Negative Resist NR71-1000P is a combustible liquid. Hle it with care. Keep it away  

heat, sparks flames. Use adequate ventilation. It may be harmful if it is swallowed or 

touched. Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves 

protective coating.