Description 

? Negative Resist NR7-3000P is a negative tone photoresist designed for 365 nm 

wavelength exposure, using tools such as wafer steppers, scanning projection aligners, 

proximity printers contact printers. 

? After resist development NR7-3000P exhibits a straight resist sidewall profile. 

? These are advantages of NR7-3000P over other resists: - superior resolution capability - fast develop time - superior photospeed - superior temperature resistance of up to 180°C - superior ivity in RIE process - easy resist removal in Resist Remover RR4 - shelf life exceeding 3 years at room temperature storage. 

? The formulation processing of NR7-3000P were designed with regard to occupational 

environmental safety. The principal solvent in NR7-3000P is cyclohexanone  

development of NR7-3000P is accomplished in a basic water solution. 

                              

Properties 

    ?    Solids content (%)                                                             31-35                   

    ?    Principal solvent                                             cyclohexanone 

    ?    Appearance                                                                 light yellow 

 liquid 

    ?    Coating characteristic                                                          very uniform, 

 striation free 

    ?    Film thickness after 150°C hotplate bake for 60 s  

           Coating spin speed, 40 s spin (rpm):                                          (nm) 

800                                                                        5700-6300 

3000 2850-3150 

4000 2460-2720 

5000 2140-2326 

 

    ?    Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film)    21 

    ?    Guaranteed shelf life at 25°C storage (years)                                        3   

Processing 

 

1. Application of resist by spin coating at ed spin speed for 40 s. 

 

2. Application of Edge Bead Remover EBR2 to bottom edge of the coated wafer for 10 

s, until 5 s before completion of spin cycle. 

 

3. 150°C hotplate bake for 60 s. (softbake) 

 

4. Resist exposure with a tool emitting 365 nm wavelength. 

 

5. 100°C hotplate bake for 60 s. (post-exposure bake) 

 

6. Resist development in Resist Developer RD6 by spray or immersion. 

Development time for 3 μm thick film, for example, is 30 s. 

 

7. Resist rinse in deionized water until water resistivity reaches prescribed limit. 

 

8. Drying of resist. 

 

9. Removal of resist in Resist Remover RR4 or in acetone. 

 

The above procedure refers to substrates, which are good conductors of heat such as silicon, 

GaAs etc. Bake times need to be increased 3.5 times for substrates, which are poor 

conductors of heat such as glass. 

 

Hling Precautions 

 

Negative Resist NR7-3000P is a flammable liquid. Hle it with care. Keep it away  

heat, sparks flames. Use adequate ventilation. It may be harmful if swallowed or touched. 

Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves  

protective coating.