NEGATIVE RESIST NR2-20000P 

 

Description 

 

? Negative Resist NR2-20000P is a negative tone photoresist designed for thick film 

applications is compatible with UV exposure tools emitting at the 365 nm 

wavelength, including wafer steppers, scanning projection aligners, proximity printers 

contact printers. 

? These are the advantages of NR2-20000P over other resists: - superior resolution capability - high photospeed which translates into high exposure throughput - fast development time - superb adhesion in plating - easy resist removal using Resist Remover RR4 

? The formulation processing of NR2-20000P were designed with regard to 

occupational environmental safety. The principal solvent in NR2-20000P is 

gammabutyrolactone development of NR2-20000P is accomplished in basic water 

solution. 

 

 

Properties 

 

? Solids content (%)                                                        50-56 

? Principal solvent                                                           gammabutyrolactone 

? Appearance                                                                  light yellow liquid 

? Coating characteristic                                                   very uniform, striation free 

? Film thickness: 

 

                                      Softbake       Softbake     Post-Exposure 

Coating       Coating    Hotplate        Hotplate      Hotplate             Film 

Spin Speed Time         Bake Time    Bake Time    Bake Time        Thickness 

(rpm)            (s)             (min) 70°C     (s) 150°C      (s) 80°C            (nm) 

1500             10              20                   270               600                 95000-105000 

2700             10               -                     120               300                 45000-55000 

3000             40               -                       60               180                 18000-22000 

 

? Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film)           21 

? Guaranteed shelf life at 5°C storage (years)                                                 1 

Processing 

 

1. Application of resist by spin coating at a ed spin speed for a time designated in 

film thickness vs. spin speed on page 1. 

2. Softbake procedure is determined by film thickness. Please refer to bake instructions 

on page 1. 

3. Resist exposure in a tool emitting 365 nm wavelength. Please determine 365 nm 

exposure light intensity (mW/cm2) with a proper gauge. Multiply resist thickness (μm) by 

21 mJ/cm2 to obtain exposure dose. Divide exposure dose (mJ/cm2) by light intensity 

(mW/cm2) at 365 nm wavelength to obtain exposure time (s). 

4. Post-exposure bake on hotplate at 80°C for a time depending on a film thickness. 

Please refer to bake instructions on page 1. 

5. Resist development in Resist Developer RD6 by spray or immersion at 20-25 °C. 

6. Resist rinse in deionized water until water resistivity reaches prescribed limit. 

7. Drying of resist. 

8. Removal of resist in Resist Remover RR4 or in acetone. 

The above procedure refers to substrates, which are good conductors of heat such as 

silicon, GaAs etc. Bake times need to be increased by a factor of 3.5 for substrates that 

are poor conductors of heat, such as glass. 

 

 

Hling Precautions 

 

Negative Resist NR2-20000P is a flammable liquid. Hle it with care. Keep it away 

heat, sparks flames. Use adequate ventilation. It may be harmful if swallowed 

or touched. Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber 

gloves protective coating.