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光电所开发、干湿蚀刻、电镀专用PR1-12000A

发布日期:2024/11/26 16:48:12

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光电所开发、干湿蚀刻、电镀专用PR1-12000A
深圳市芯泰科光电有限公司
产品热线许经理 :13玖23八66554  扣扣:35捌9123零

FUTURREX  POSITIVE RESIST PR1-12000A
Description 
 
? Positive Resist PR1-12000A is a positive tone photoresist designed for 365 or 436 nm 
wavelength exposure, using tools such as wafer steppers, scanning projection aligners, 
proximity printers contact printers. PR1-12000A excels in applications when superior 
adhesion is required. Use of adhesion promoters, such as HMDS is not recommended 
with PR1-12000A. 
? These are the advantages of PR1-12000A over other resists: - superior resolution capability - fast photospeed - substrate adhesion which is superior to that of any commercial positive resist - ease of removal after RIE process - shelf life exceeding 1 year at room temperature storage. 
? The formulation processing of PR1-12000A were designed with regard to 
occupational environmental safety. The principal solvent in PR1-12000A is 1
methoxy-2-propanol development of PR1-12000A is accomplished in a basic water 
solution. 
                              
Properties 
 
    ?    Solids content (%)                                                                                  40-45                          
    ?    Principal solvent                                                                                     1-methoxy-2- 
                                                                                                                          propanol 
    ?    Appearance                                                                                            light yellow liquid 
    ?    Coating characteristic                                                                             very uniform,  
                                                                                                                          striation free 
    ?    Film thickness after 100°C oven bake for 15 minutes  
           Coating spin speed, 40 s spin (rpm):                                                           (nm) 
             800                                                                                                       23500-24500      
2300                                                                                                       14800-15200 
3000                                                                                                 11800-12200 
 
? Sensitivity (mJ/cm2 for 1 μm thick film): 
       365 nm exposure wavelength                                                                70 
           436 nm exposure wavelength                                                                40 
    ?    Guaranteed shelf life at 25°C storage (years)                                        1 
 
1. Application of resist by spin coating at ed spin speed for 40 s. 
 
2. Application of Edge Bead Remover EBR1 to bottom edge of the coated wafer for 10 
s, until 5 s before completion of spin cycle. 
 
3. 100°C bake in a bake oven for 30 minutes or 120oC hotplate bake for 180 s. 
 
4. Resist exposure with a tool emitting 365, 406 or 436 nm wavelengths. 
 
5. Resist development in Resist Developer RD6 by spray or immersion. 
 
6. Resist rinse in deionized water until water resistivity reaches prescribed limit. 
 
7. Drying of resist. 
 
8. Removal of resist in Resist Remover RR4 or in acetone. 
 
    The above procedure refers to substrates, which are good conductors of heat such as silicon,  
    GaAs etc. Bake times need to be increased 3.5 times for substrates, which are poor  
    conductors of heat such as glass. 
 
 
Hling Precautions 
 
Positive Resist PR1-12000A is a flammable liquid. Hle it with care. Keep it away  
heat, sparks flames. Use adequate ventilation. It may be harmful if swallowed or touched. 
Avoid contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves  
protective coating.