Description
? Negative Resist NR5-8000 is a negative tone photoresist designed for thick film
applications is compatible with UV exposure tools emitting at the 365 nm wavelength,
including wafer steppers, scanning projection aligners, proximity printers contact
printers.
? These are the advantages of NR5-8000 over other resists: - superior resolution capability - high photospeed which translates into high exposure throughput - fast development time - superior temperature resistance of up to 180°C - superior ivity in RIE processes - easy resist removal using Resist Remover RR4 - shelf life exceeding 3 years at room temperature storage.
? The formulation processing of NR5-8000 were designed with regard to occupational
environmental safety. The principal solvent in NR5-8000 is cyclohexanone
development of NR5-8000 is accomplished in a basic water solution.
Properties
? Solids content (%) 39-43
? Principal solvent cyclohexanone
? Appearance light yellow liquid
? Coating characteristic very uniform,
striation free
? Film thickness:
Post
Exposure
Coating Oven Hotplate Hotplate Film
Spin Speed Time Bake Time Bake Time Bake Time Thickness
(rpm) (s) (min) 80°C (s) 150°C (s) 100°C (nm)
250 30 15 followed by 180 240 90000-95000
400 30 15 followed by 120 120 54000-60000
1000 40 0 60 60 12500-14500
2000 40 0 60 60 9000-12000
3000 40 0 60 60 7500-8500
4000 40 0 60 60 6250-6750
5000 40 0 60 60 5750-6250
? Sensitivity at 365 nm exposure wavelength (mJ/cm2 for 1 μm thick film) 21
? Guaranteed shelf life at 25°C storage (years) 3
Processing
1. Application of resist by spin coating at a ed spin speed for a time designated in a
film thickness vs. spin speed on page 1.
2. Softbake procedure is determined by film thickness. Please refer to bake instructions on
page 1.
3. Resist exposure in a tool emitting 365 nm wavelength. Please determine 365 nm
exposure light intensity (mW/cm2) with a proper gauge. Multiply resist thickness (μm) by
21 mJ/cm2 to obtain exposure dose. Divide exposure dose (mJ/cm2) by light intensity
(mW/cm2) at 365 nm wavelength to obtain exposure time (s).
4. 100°C hotplate bake for a time depending on a film thickness. Please refer to bake
instructions on page 1.
5. Resist development in Resist Developer RD6 by spray or immersion at 20-25 °C.
Development time for an 8 μm thick film is 40 s for 100 μm thick film is 330 s.
6. Resist rinse in deionized water until water resistivity reaches prescribed limit.
7. Drying of resist.
8. Removal of resist in Resist Remover RR4 or in acetone.
The above procedure refers to substrates, which are good conductors of heat such as silicon,
GaAs etc. Bake times need to be increased by a factor of 3.5 for substrates that are poor
conductors of heat such as glass.
Process Results
Figure 1. Example of resist resolution.
Film thickness: 54 μm, mask dimension: 9 μm line/space
exposure dose: 1100 mJ/cm2, focus offset: -15 μm.
Exposure tool: Ultratech Stepper Saturn Model, i-line
Hling Precautions
Negative Resist NR5-8000 is a flammable liquid. Hle it with care. Keep it away heat,
sparks flames. Use adequate ventilation. It may be harmful if swallowed or touched. Avoid
contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves protective
coating.