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半导体铜制程、CMP后清洗剂,替代ATMI ESC-784英

发布日期:2024/11/26 16:48:12

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ZS-800 Series Post CMP Cleaning Solutions
Pourbaix diagram for copper in uncompld media
 Redox pH condition are critical to Cu surface treatment formulation design! 

Controlled treatment to oxidized Cu surface

Critical to PCMP Cleaning Solution Design
 1. Particle removal: abrasive materials slurry 
 2. Organic residue removal: polymers, BTA, ligs…. 
 3. Metal complex inorganic residue removal 
 4. Safe to other film materials: SiOx, SiN, dielectric….. 
 5. Cu corrosion inhibition 
 6. Cu surface conditioning

Pourbaix diagram for copper-BTA system in water
Cu-BTA complex solid is s between pH  3~10. Cleaning solutions with 
pH higher than 10 or lower than 3 are capable to remove Cu-BTA complex!

CEMI ZS-800 Series Design Concepts
1. Buffered high pH solution 
 2. Reducing agent to control solution electrochemical property 
 3. Metal chelators to remove metal oxides/ions 
 4. Surfactants to remove organic inorganic residues 
 5. Corrosion inhibitors to minimize Cu corrosion 
 6. Concentrated aqueous solution for cost effectiveness

TMAH/H2O                                 pH adjuster, buffered aqueous, Cu-BTA complex removal
 (KOH)
 Reducing agent                         Electro-potential control, buffer, Cu reducing 
 Metal chelator                           Metal oxide/ion removal, Cu-BTA complex removal 
 Surfactant                                 Organic inorganic residue removal, surface wetting
 Corrosion                                   Cu  corrosion control surface conditioning
Inhibitor

CEMI ZS-800 Series Solution Comparison
1. Dilution ratio can be tailor to customer process need. 
 2. CIP formulation with same concept can be tailor to customer requirements.
3. Actual TMAH% in Finished Good can be determined through titration. 
 4. ZS-800 equivalent POR reported actual TMAH% not input value. 
 5. ZS-802 formulation adopted an optimal buffer system to achieve lower Cu etch rate. 
 6. Local manufacturing in Taiwan. 
 
CEMI ZS-802 Series pH Variation
 1. Lowest good TMAH input amount of ZS-802 is 3.3%. 
 2. TAMH input amount is determined to be 3.8% for ZS-802 formulation design. 

CEMI ZS-800 Dilution Ratio & Application Window
1. Excellent buffer property upon dilution is needed to ensure good performance. 
 2. ZS-800 series cleaning solution can be used at >100X dilution. 

Tafel Plot Using ZS-800 Series as Electrolyte
Copper has lower corrosion rate in ZS-802A&ZS-802K than ZS-800 (POR).

CEMI ZS-800 Series Specs & CoA