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离子植入、电镀专用、耐温耐酸碱正胶PR1-2000A

发布日期:2024/11/26 16:48:12

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离子植入、电镀专用、耐温耐酸碱正胶PR1-2000A
深圳市芯泰科光电有限公司
产品热线许经理 :13玖23八66554  扣扣:35捌9123零

FUTURREX  POSITIVE RESIST PR1-2000A
Description 
? Positive Resist PR1-2000A is a positive tone photoresist designed for 365 or 436 nm 
wavelength exposure, using tools such as wafer steppers, scanning projection aligners, 
proximity printers contact printers. PR1-2000A excels in applications when superior 
adhesion is required. Use of adhesion promoters, such as HMDS is not recommended 
with PR1-2000A. 
? These are the advantages of PR1-2000A over other resists: - superior resolution capability - fast photospeed - superior linewidth control due to suppression of reflective notching - substrate adhesion which is superior to that of any commercial positive resist - ease of removal after RIE process - shelf life exceeding 1 year at room temperature storage. 
? The formulation processing of PR1-2000A were designed with regard to occupational 
environmental safety. The principal solvent in PR1-2000A is 1-methoxy-2-propanol 
development of PR1-2000A is accomplished in a basic water solution. 
                              
Properties 
    ?    Solids content (%)                                29-31                   
    ?    Principal solvent                                                       1-methoxy-2- 
  propanol 
    ?    Appearance                                                               light yellow  
  liquid 
    ?    Coating characteristic                                                 very uniform,  
  striation free 
    ?    Film thickness after 100°C oven bake for 15 minutes. 
           Coating spin speed, 40 s spin (rpm):                                            (nm) 
             800                                                                        3800-4200      
2000 2340-2580 
3000 1900-2100 
4000 1634-1806 
5000 1424-1576 
 
? Sensitivity (mJ/cm2 for 1 μm thick film): 
     365 nm exposure wavelength                                                 70 
         436 nm exposure wavelength                                                  40 
    ? Guaranteed shelf life at 25°C storage (years)                                1  
Processing 
 
1. Application of resist by spin coating at ed spin speed for 40 s. 
 
2. 100°C bake in a bake oven for 15 minutes or 120oC hotplate bake for 60 s. 
 
3. Resist exposure in a tool incorporating 365, 406 or 436 nm wavelengths. 
 
4. Resist development in Resist Developer RD6 by spray or immersion. 
 
5. Resist rinse in deionized water until water resistivity reaches prescribed limit. 
 
6. Drying of resist. 
 
7. Removal of resist in Resist Remover RR4 or in acetone. 
 
The above procedure refers to substrates, which are good conductors of heat such as silicon, 
GaAs etc. Bake times need to be increased 3.5 times for substrates, which are poor 
conductors of heat such as glass. 
 
Hling Precautions 
 
Positive Resist PR1-2000A is a flammable liquid. Hle it with care. Keep it away heat, 
sparks flames. Use adequate ventilation. It may be harmful if swallowed or touched. Avoid 
contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves protective 
coating.