研究所、永久材、MEMS专用 GM1050

Gersteltec SU-8 series

深圳市芯泰科光电有限公司

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Gersteltec SU-8 series

GM1050（negative tone photo-epoxy for layers 3 to 8 μm）

General information

GM 1050 is an epoxy based, chemically amplified resist system with excellent sensitivity high aspect ratios. The primary applications are Micro-fabricated Mechanical Structures (MEMS) other Microsystems. Examples are sensors, micro-fluidic components, electronic coils, inkjet print head nozzles, multi-chip modules, actuators, LCD spacers moulds for plastic, stamps for hot embossing electroplating.

 Datasheet parts… 

 1 /Schematics of the process 

 2 /Process description

 3 /Process parameters

 4 /Processing GM 1050– Overview

 5 /Typical processes (3, 4, 5, 6, 7 & 8 μm) 

 6 /Troubleshooting

1/Schematicsoftheprocess

 2 /Process description

 A typical GM 1050 process consists of

- Substrate preparation (dehydration, cleaning…) 

-  Spin-coating 

-  Relaxation time to improve the surface uniformity 

-  Soft Bake Exposure to initiate the cross-linking 

-  Post Exposure bake (PEB), to cross-link exposed regions. 

-  Development Rinse & dry 

-  Hard Bake (optional: in case of contact with liquids)

-  Imaged material (optional: in case of moulding) 

-  Remove (optional: in case of moulding)

 (in chronological order) 

 ? Put the substrate in an oven at a minimum temperature of 130°C during at least 20 minutes to remove adsorbed water the substrate surface. 

 Alternatively use an oxygen plasma for 7 min at 500 Watts in a Microwave plasma reactor. This should increase the temperature inside the plasma chamber above 80°C after the 2 first minutes.

 Stard HMDS procedure is not recommended for GM10xx series on SiO2 based wafers. 

 ? Spin-coat the resist after cooling down the substrates, at the wanted speed level during 40 seconds. The acceleration deceleration ramps should be about 100 rpm/s to avoid any contamination of the chuck the pins by the GM 1050. Otherwise, some resist on the vacuum system should damage your spin coat system.

 ? Relax (optional) the resist 5 min. depending on the resist thickness. For GM 1050, this step is not necessary. If there are some bubbles just after spin coating they can be burst using a clean thin tip. The created hole should be removed during the required time. Finally this relaxation time should improve the uniformity of the layer, evaporate some portion of solvent.

 ? Softbake the coated substrate directly on a hotplate at 120°C during the requested time. If some bubbles appear, make a ramp of about 4°C/min., or make a step at 65°C during 30s. When holding them with some tweezers no stick or impression have to be observed otherwise increase the bake time. Cooling on a room temperature plate. 

 ? Expose the coated substrate with the mask. The exposure dose adjusts the negative wall profile whose slope is closed to 90°. Have a look on the exposure curve to choose as a function of your thickness the minimum dose (at i-line). Ideally try some multiple exposures above the minimum dose. 

 ? Post Exposure Bake (PEB): that bake accelerates the cross-linking of the exposed areas making them insoluble in the developer. Bake at 95°C during the requested time with a ramp of 4°C/min. Use the same ramp for cooling down to room temperature. 

 ? Develop in DRGM. When the structure is through-developed (cleared), add another 10% of the time in a cleaned bath of the total development time to finalize the side wall profile. An over-development induces adhesion problems. 

 ? Rinse with Isopropanol. Once there are not any more white traces the development is then finished; otherwise develop again. 

 ? Dry the wafers just letting them at the ambient air, on a wet bench with an appropriate air flow (exhaust) or use a nitrogen flow. 

 ? Hard-bake (optional) the coated substrate if after drying there are some unstuck GM 1050 or cracks. Only the smallest cracks (<5 μm) will be totally removed after this step. Recommended bake: 2°C/min room temperature up to 150°C, isotherm during 5 to 10 min., natural cooling (4°C/min max).

Optional… 

 ? Imaged material (optional: in case of moulding): deposition of you material by sputtering, electrodepositing… 

 ? RemoveGM1050: using the Gersteltec GM 1050 striper (without hard-bake).

3 /Process parameters

4/ProcessingGM1050-Overview

 5/Typicalprocesses(3,4,5,6,78μm)

 Firstly,thewaferpreparationshouldbeasmentionedpreviously(Oxygenplasmaat 500Wfor7min(forsomecleanedwafersyet)…).

 6 /Troubleshooting 

 ? Cracks: these drawbacks appear as a function of the exposure dose, temperature ramps taken Pre-bake time. to make above the minimum dose (cf.§5) to define the right dose 20% more should be enough. 

 ? White traces after development: This is only because there is still some unexposed GM 1050 not totally developed. In fact unexposed GM 1050+Isopropanol make a white complex that you can find on your wafers. In the other side, just pay attention to not develop too much time. Otherwise you could unstick the GM 1050 layer the substrate.

Appendix Equipments: 

-Spin-coating : RC-8 Karl Suss

 -Mask aligner : MA6 mask aligner Karl Suss

- Hotplates Karl Suss 

- Thickness measurements : AlphaStep 500.